The University of Iowa

IMPORTANT: The Optical Science and Technology Center and Microfabrication Facility are being retired after fall 2018 and their services reconfigured under the new Iowa Center for Research, Exploration, and Advanced Technology in Engineering and Sciences (Iowa-CREATES) and Materials Analysis, Testing, and Fabrication (MATFab) in the Iowa Advanced Technology Laboratories (IATL) in spring 2019. As a result, the OSTC/UIMF site will eventually be taken down. Until then, please visit the Iowa-CREATES Website at, or read more about the new center at


Optical Science and
Technology Center


Check out the latest news and information relating to the Optical Science and Technology Center:

May 2, 2014


Friday, May 2, 2014

OSTC Annual Symposium & Poster Registration
Iowa Advanced Technology Center

February 11, 2014

University of Iowa - Microfabrication Facility
Nanotechnology Training

Atomic Layer Deposition (ALD) is a “Nano” technology, allowing thin films of a few nanometers to be deposited in a precisely controlled way.

Atomic Layer Deposition (ALD) is a thin film deposition technique that is based on the sequential, self-limiting surface reaction based on the temporal separation of two or more reactants.

Key Applications: high-k gate oxides, capacitors, solar cells, organic semiconductors, microfluidic, MEMS, Bio MEMS, memristors

Date and venue: Feb. 11, 9:30 am, IATL 104

Training details:

Lecture: 9:30 – 10:45 am

January 30, 2014

UIMF highlighted in IowaNow article-

"UI facility studies small structures, supports big projects"

Microfabrication facility offers course on electronic devices

January 21, 2014

New Course: The Art of Molecular Beam Epitaxy (029:225)

Course description:  This course will review the science and technology of molecular beam epitaxy growth with an experimental emphasis.  We will cover such topics as the theory of X-ray diffraction measurements, including symmetric and asymmetric scans, reciprocal space mapping,  calculation of strain and relaxation of a crystal from X-ray measurement, and simulation of X-ray scans; determination of an epilayer critical thickness; measurement techniques and analysis of different types of surface, bulk, and interface defects; determination of true V/III ratios and stoichiometric growth conditions in binary, ternary, and quaternary semiconductors; numerical calculation of bandgaps,...

January 21, 2014

UIMF Equipment Spec Sheets are now available on website.

Information may be found at: